Accession Number:

ADP006643

Title:

Pulsed Laser Deposition (PLD) of Oriented Bismuth Titanate Films for Integrated Electronic Applications,

Descriptive Note:

Corporate Author:

WESTINGHOUSE SCIENCE AND TECHNOLOGY CENTER PITTSBURGH PA

Report Date:

1991-04-05

Pagination or Media Count:

10.0

Abstract:

In this paper we describe recent successes of growth of epitaxial bismuth titanate BTO films by pulsed laser deposition PLD suitable for electro-optic and electrical switching device structures, and fabrication of an improved gate structure for a ferroelectric memory FET FEMFET. TEM and x-ray results indicate that excellent crystalline quality BTO films were achieved on LaAlO3. Polarization switching was demonstrated for BTO capacitors with epitaxial superconducting YBaCu3Oy as the lower electrode. Using an SiO2 buffer layer, a BTOSi structure was fabricated and direct charge modulation in the Si by polarization reversal in the BTO was demonstrated.

Subject Categories:

  • Electricity and Magnetism
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE