Advances in Processing and Properties of Perovskite Thin-Films for FRAMs, DRAMs, and Decoupling Capacitors,
ARIZONA STATE UNIV TEMPE
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Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt Ti Si3N4 Si 100 substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were fabricated at temperatures as low as 550 deg C within 15 minutes by rapid thermal annealing. The films heat treated at 700 deg C for 5 minutes were single grain thick and exhibited P sub r, P sub sp, and E sub c in the ranges of 29-32 micron Ccm2, 44-53 micro Ccm2, and 50-60 kVcm, respectively, and high speed switching times below 5 ns on 30x30 micron m2 electrodes. A switching time of 2.7 ns was observed on 19xl9 micron m2 area electrodes at a field of 200 kvcm. Results of low and high field characterization on paraelectric PLT thin-films which were conventionally heat treated indicated that it has an excellent potential for use in ULSI DRAMs and as decoupling capacitors. These films showed a high charge storage density 15 micron Ccm2 and a low leakage current 0.5 micron Acm2 at a field of 200 kvcm. Also, the charging time for a capacitor area of 1 micron m2 at 200 kvcm was estimated to be 0. 1 0 ns.
- Electricity and Magnetism
- Ceramics, Refractories and Glass