Accession Number:

ADP006639

Title:

Recent Advances in the Deposition of Ferroelectric Thin Films,

Descriptive Note:

Corporate Author:

PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB

Personal Author(s):

Report Date:

1991-04-05

Pagination or Media Count:

20.0

Abstract:

Recent developments in ferroelectric thin film deposition involving plasma based approaches, are described, which include a multi-magnetron. sputter deposition, b Multi-ion-beam reactive sputter MIBERS deposition, c Pulsed excimer laser ablation and d ECR Electron cyclotron resonance plasma assisted deposition. These methods commonly prevailed intrinsic low energy ion bombardment during the growth process, which may be used for the control over composition, crystallization temperature and microstructure. A low energy 60 - 75 eV ion bombardment of the ferroelectric PbZr,Ti03 thin films indicated a reduction in the phase formationcrystallization temperature, improved the electrical properties, microstructure and the surface smoothness. Discussion is presented emphasizing the effects of low energy bombardment in different deposition processes. Recent findings using rapid thermal annealing process are also described.

Subject Categories:

  • Electricity and Magnetism
  • Electrical and Electronic Equipment
  • Ceramics, Refractories and Glass
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE