Accession Number:

ADD019893

Title:

Modified InAs Hall Elements

Descriptive Note:

Patent application, filed 13 Jan 2000

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

2000-01-13

Pagination or Media Count:

21.0

Abstract:

This invention pertains to more sensitive and more stable electronic devices which can sense electrical and magnetic fields. The devices are characterized by InAs channels confined on both sides thereof by a wide band gap AlSb material protective layers above the AlSb material modulation doping above the AlSb material and layers of the InAs channel material containing 1 to 99 mol percent antimony, with the channel material being deposited in the form of alternating monolayers of InSb and InAs, of a ternary mixture of InAsSb.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE