Anti-Charging Layers for Beam Lithograpghy and Mask Fabrication
Patent application, filed 25 May 2001
NAVAL RESEARCH LAB WASHINGTON DC
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This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers SAMs as discharge layers.
- Manufacturing and Industrial Engineering and Control of Production Systems
- Solid State Physics