Accession Number:

ADD019839

Title:

Anti-Charging Layers for Beam Lithograpghy and Mask Fabrication

Descriptive Note:

Patent application, filed 25 May 2001

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s):

Report Date:

2001-05-25

Pagination or Media Count:

19.0

Abstract:

This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers SAMs as discharge layers.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE