Patterning of GaN Crystal Films with Ion Beams and Subsequent Wet Etching
Patent Application, Filed 29 Nov 2000
DEPARTMENT OF THE NAVY WASHINGTON DC
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The invention provides a method for etching gallium nitride GaN comprising the steps of providing a GaN film imagewise amorphizing a portion of the GaN film by ion implantation to form an amorphized portion and wet etching of the GaN film having an amorphized portion to remove the amorphized portion. When the imagewise amorphizing process can be done without a mask, such as with a focused implantation ion beam, the process itself becomes maskless.