Accession Number:

ADD019733

Title:

CMOS Devices Hardened Against Total Dose Radiation Effects

Descriptive Note:

Patent Application, Filed 12 Jul 2000

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

2000-07-12

Pagination or Media Count:

17.0

Abstract:

A CMOS or NMOS device has one or more n-channel FETs disposed on a substrate, the device being resistant to total dose radiation failures, the device further including a negative voltage for applying a steady negative back bias to the substrate of the n-channel FETs to mitigate source, leakage currents in the device, thereby mitigating total dose radiation effects. A method for operating a CMOS or NMOS device to resist total dose radiation failures, the device having one or more n-channel FETs disposed on a substrate, has the steps a disposing the CMOS or NMOS device in a radiation environment, the radiation environment delivering a dose on the order of tens or hundreds of krad Si over the period of use of the CMOS device and b applying a negative back bias to the substrate of the NMOS FETs, at a voltage for mitigating leakage currents about the n-channel FETs.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE