Accession Number:

ADD019656

Title:

Method for Making Silicon Germanium Alloy and Electric Device Structures

Descriptive Note:

Patent, Filed 6 May 1997, patented 14 Sep 1999

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1999-09-14

Pagination or Media Count:

7.0

Abstract:

A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C., exposing the passivated surface to a flow of about 1 slm of about 2 percent silane in a hydrogen carrier and a flow of at least 200 sccm of about 10 percent germane in a hydrogen carrier to form a layer of single crystal silicon germanium alloy on the passivated surface of the sapphire substrate, and ramping the temperature down to about 650 degrees C. during the step of exposing the passivated surface to the germane gas.

Subject Categories:

  • Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE