Accession Number:

ADD019445

Title:

Electronic Devices Grown on Off-Axis Sapphire Substrate

Descriptive Note:

Patent Application, Filed 15 Jul 99

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1999-07-15

Pagination or Media Count:

19.0

Abstract:

An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off alpha-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1 - 10 micron thick semiconducting film disposed on the nucleating layer.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE