Chemical Vapor Deposition of II/VI Semiconductor Material Using Triisopropylindium as a Dopant.
Patent, Filed 18 May 94, patented 16 Mar 99
DEPARTMENT OF THE NAVY WASHINGTON DC
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Triisopropylindium CH32CH3In is used as an n-type dopant for IIVI semiconductor material. This dopant precursor is particularly suited for indium doping of IIV semiconductor materials at low carrier concentrations in the range of the low 10exp 15cu cm and does not exhibit an appreciable memory effect.
- Solid State Physics