Accession Number:

ADD019382

Title:

Large Area Plasma Processing System (LAPPS)

Descriptive Note:

Patent, Filed 27 Aug 97, patented 23 Feb 99

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1999-02-23

Pagination or Media Count:

7.0

Abstract:

The large area plasma processing system LAPPS is a system wherein an electron beam is used to produce a plasma. A large area uniform plasma is produced where length and width can be comparable 10s-100s of cm and very much larger than the plasma thickness approx. 1 cm. The plasma distribution is created independent of the surface to be processed and the bias applied to the surface. The beam produced plasma has a low intrinsic electron and excitation temperature plasma, allowing the process to be conducted with better control of free radical production. A material, such as a substrate, being processed may be placed in close proximity to plasma with controlled ion bombardment or without substantial bombardment by energetic ions. The system also offers a large available area for gas inflow and removal from the processing chamber and cathode chamber so as not to contaminate the material being processed or damage the cathode.

Subject Categories:

  • Plasma Physics and Magnetohydrodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE