Accession Number:

ADD019229

Title:

Deposition of High Quality Diamond Film on Refractory Nitride.

Descriptive Note:

Patent filed 16 May 91, patented 1 Sep 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1998-09-01

Pagination or Media Count:

9.0

Abstract:

An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. a polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.

Subject Categories:

  • Organic Chemistry
  • Coatings, Colorants and Finishes
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE