Electronic Devices With InAlAsSb/AlSb Barrier
Patent, Filed 29 Apr 97, patented 25 Aug 98
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
An electronic device characterized by a GaAs substrate and a base disposed on the substrate the base comprising InAs channel layer, AlSb layer above the channel layer InxAl1-xAsySb1-y layer containing at least In, Al, and As disposed above the AlSb channel layer. InAs cap layer disposed above and in contact with the InxAl1-xAsySb1-ylayer disposed below the InAs channel layer and in contact with the substrate p GaSb layer disposed within the AlSb layer. Schottky gate with a pad disposed on and in contact with the InxAl1-xAsySb1-y layer at least one ohmic contact disposed on the InAs cap layer and a trench extending through the base to the substrate isolating the gate bonding pad from the device and providing a gate air bridge which prevents contact between the gate and the InAs layer. The gate air bridge fabrication is accomplished by a liquid etchant containing more than half on volume basis of concentrated lactic acid or acetic acid with remainder hydrogen peroxide and concentrated hydrofluoric acid. The etchant attacks InAs, InxAl1-xAsySb1-y, and GaSb but does not attack GaAs and Au-based alloys.
- Inorganic Chemistry
- Electrical and Electronic Equipment