Method of Forming an Interband Lateral Resonant Tunneling Transistor
Patent, Filed 19 Jun 96, patented 8 Sep 98
DEPARTMENT OF THE NAVY WASHINGTON DC
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This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
- Electrical and Electronic Equipment