Accession Number:

ADD019193

Title:

Method of Forming an Interband Lateral Resonant Tunneling Transistor

Descriptive Note:

Patent, Filed 19 Jun 96, patented 8 Sep 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1998-09-08

Pagination or Media Count:

12.0

Abstract:

This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE