Radiation-Hardening of SOI by Ion Implantation into the Buried Oxide Layer
Patent, Filed 31 May 96, patented 18 Aug 98
DEPARTMENT OF THE NAVY WASHINGTON DC
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The radiation hardness of a silicon-on-insulator structure is improved by implanting dopant ions such as Si into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at the active Si layerburied oxide layer interface. This implantation creates electron trapsrecombination centers in the buried oxide layer.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Solid State Physics