Accession Number:

ADD019172

Title:

Radiation-Hardening of SOI by Ion Implantation into the Buried Oxide Layer

Descriptive Note:

Patent, Filed 31 May 96, patented 18 Aug 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1998-08-18

Pagination or Media Count:

3.0

Abstract:

The radiation hardness of a silicon-on-insulator structure is improved by implanting dopant ions such as Si into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at the active Si layerburied oxide layer interface. This implantation creates electron trapsrecombination centers in the buried oxide layer.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE