Accession Number:

ADD019132

Title:

Graded Electron Affinity Semiconductor Field Emitter

Descriptive Note:

Patent, Filed 3 Jul 95, patented 30 Jun 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1998-06-30

Pagination or Media Count:

14.0

Abstract:

A field emitter is disclosed comprising a graded electron affinity surface layer. The graded electron affinity layer provides for increased transconductance, reduced energy distribution of emitted electrons, reduced noise and increased uniformity in its operation.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE