Accession Number:

ADD019105

Title:

Lower Bandgap, Lower Sensitivity, Silicon Carbide Heteroepitaxial Material, and Methods of Making Same

Descriptive Note:

Patent, Filed 17 Jan 95, patented 16 Jun 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1998-06-16

Pagination or Media Count:

5.0

Abstract:

A silicon carbide semiconductor material and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200 deg C, or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE