Lower Bandgap, Lower Sensitivity, Silicon Carbide Heteroepitaxial Material, and Methods of Making Same
Patent, Filed 17 Jan 95, patented 16 Jun 98
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
A silicon carbide semiconductor material and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200 deg C, or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.
- Solid State Physics