Accession Number:

ADD018984

Title:

Photoelastic Stress Sensor

Descriptive Note:

Patent, Filed 17 Jan 96, patented 17 Mar 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1998-03-17

Pagination or Media Count:

5.0

Abstract:

A stress detection apparatus is provided. A piece of semiconductor grade, single crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.

Subject Categories:

  • Infrared Detection and Detectors
  • Mechanics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE