Photoelastic Stress Sensor
Patent, Filed 17 Jan 96, patented 17 Mar 98
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
A stress detection apparatus is provided. A piece of semiconductor grade, single crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.
- Infrared Detection and Detectors