Accession Number:

ADD018974

Title:

Complementary Vertical Bipolar Junction Transistors Formed in Silicon-On-Saphire

Descriptive Note:

Patent, Filed 21 Aug 96, patented 3 Feb 98

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1998-02-03

Pagination or Media Count:

11.0

Abstract:

A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N silicon island and a P silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N silicon island by epitaxially growing an N-type silicon layer on the N silicon island. Then, a P region is created in the N-type silicon layer. An N region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P silicon island. Then, an N region is created in the P-type silicon layer. A P region created in the N region completes the PNP junction device.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE