Accession Number:

ADD018768

Title:

Method of Forming an Interband Lateral Resonant Tunneling Transistor with Single Narrow Gate Electrode.

Descriptive Note:

Patent, Filed 27 Jan 95, patented 9 Sep 97,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1997-09-09

Pagination or Media Count:

12.0

Abstract:

It is the objective of this invention to provide a resonant tunneling device based on resonant tunneling processes in narrow-gap macrostructures capable of driving follow-on devices within the electronic circuit Another object of this invention is to provide a resonant tunneling transistor displaying negative differential resistance NDR and transconductance. g microns. that are favorable to fanout -lo mSmm at temperatures up to 300 K These objects are achieved by an interband lateral resonant transistor that is a narrow-gap heterostructure transistor employing the resonant tunneling technique with a single gate. Tunneling occurs via valence states in the gate region which have been brought into energy resonance with the conduction states in the source and drain channels. In the design of the interband lateral resonant transistor advantage is taken of the fact that the valence quantum states. or levels. are well resolved because the subband splitting for holes near the top of the valence band in both Hg-based and lELAs-based quantum wells are nearly as large as for the electrons.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE