In-Situ Monitoring and Feedback Control of Metalorganic Precursor Delivery
Patent, Filed 6 Oct 95, patented 29 Jul 97
DEPARTMENT OF THE NAVY WASHINGTON DC
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The in-situ monitoring of metal organic precursor delivery in a metal organic chemical vapor deposition oxide system in high temperature super conductors HTSC film growth is accomplished by utilizing the distinct absorbance bands for metal organic compounds. As an ultraviolet-visible light beam is passed through an effluent metal organic gas stream the relative change in ultraviolet-visible absorbance of the ultraviolet-visible light beam passing through the effluent metal organic gas stream is monitored. Stoichiometry control is achieved by feeding back absorbance data to a controlling parameter such as carrier gas mass flow rate, thus stabilizing fluctuations in source concentration in the bubble effluent from a computer or similar monitoring device. Such an apparatus and method improves the stoichiometry control of mixed metal oxide film deposition and increases the manufacturability of thin films.
- Inorganic Chemistry
- Physical Chemistry
- Laminates and Composite Materials