Ohmic Contact for Semiconductor
Patent Application, Filed 27 Mar 97
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationship to each other, the source and the drain comprising PdbarrierAu layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170 deg C for 14-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.
- Electrical and Electronic Equipment
- Electricity and Magnetism