Accession Number:

ADD018630

Title:

Process for Forming Epitaxial BaF2 on GaAs

Descriptive Note:

Patent Application, Filed 31 May 95

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1995-05-31

Pagination or Media Count:

13.0

Abstract:

A process for growing single crystal epitaxial BaF2 layers on gallium arsenide substrates by slowly reacting Ba, BaCl2, BaI2, BaBr2, BaF2.BaCl2, BaF2.BaBr2, BaF2.BaI2, BaC12.BaBr2 , Ba3GaF62, BaH2, or BaO2 vapor with a clean, hot GaAs substrate at 500 to 700 deg C in high vacuum until a uniform, thin tilde 12A layer of reaction product is formed and then vapor depositing BaF2 onto the reaction layer at room temperature to 400 deg C to form the single crystal, epitaxial BaF2 layer.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE