Low Temperature Plasma Film Deposition using Dielectric Chamber as Source Material
Patent, Filed 24 Jan 96, patented 3 Jun 97
DEPARTMENT OF THE NAVY WASHINGTON DC
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A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.
- Electrical and Electronic Equipment
- Plasma Physics and Magnetohydrodynamics