Accession Number:

ADD018539

Title:

Non-Volatile, Bidirectional, Electrically Programmable Integrated Memory Element Implemented Using Double Polysilicon.

Descriptive Note:

Patent, Filed 13 Dec 95, patented 1 Apr 97,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1997-04-01

Pagination or Media Count:

14.0

Abstract:

A non-volatile, bidirectional electrically programmable integrated memory element is describe which includes a dielectric structure supported by a substrate and a programming terminal supported by the dielectric structure. The programming terminal includes 1 a first polysilicon structure a second polysilicon structure and an electrically conductive first interconnect which electrically connects the first polysilicon structure to the second polysilicon structure 2 a floating gate structure supported by the dielectric structure which includes a a third polysilicon structure which overlies and is separated from a section of the first polysilicon structure by the dielectric structure b a fourth polysilicon structure which is overlain and separated from a section of the second polysilicon structure by the dielectric structure and c an electrically conductive second interconnect which electrically couples the third polysilicon structure to the fourth polysilicon structure. The memory element also includes a capacitor electrically connected to the second interconnect.

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE