Non-Volatile, Bidirectional, Electrically Programmable Integrated Memory Element Implemented Using Double Polysilicon.
Patent, Filed 13 Dec 95, patented 1 Apr 97,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A non-volatile, bidirectional electrically programmable integrated memory element is describe which includes a dielectric structure supported by a substrate and a programming terminal supported by the dielectric structure. The programming terminal includes 1 a first polysilicon structure a second polysilicon structure and an electrically conductive first interconnect which electrically connects the first polysilicon structure to the second polysilicon structure 2 a floating gate structure supported by the dielectric structure which includes a a third polysilicon structure which overlies and is separated from a section of the first polysilicon structure by the dielectric structure b a fourth polysilicon structure which is overlain and separated from a section of the second polysilicon structure by the dielectric structure and c an electrically conductive second interconnect which electrically couples the third polysilicon structure to the fourth polysilicon structure. The memory element also includes a capacitor electrically connected to the second interconnect.
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