Accession Number:

ADD018354

Title:

Method for Preparation of Mask for Ion Beam Lithography.

Descriptive Note:

Patent, Filed 4 Apr 94, Patented 22 Oct 96,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1996-10-01

Pagination or Media Count:

6.0

Abstract:

A mask for ion beam lithography is made by coating a front side, sidewalls, and a backside of a substrate with an insulating layer opening, on the front side of the substrate, a window in the insulating layer to expose a front substrate surface depositing an oxide membrane on the front substrate surface opening a portion of the insulating material on the backside of the substrate to form an exposed backside of the substrate forming a photoresist layer on the oxide membrane patterning the photoresist layer ion beam etching the oxide membrane through the patterned photoresist layer to completely remove selected portions of the oxide membrane and form a stenciled pattern in the oxide membrane removing the patterned photoresist layer from the stenciled oxide membrane removing, from the backside of the substrate, the exposed backside of the substrate to expose a backside of the stenciled pattern in the oxide membrane, thus leaving a stenciled oxide membrane, corresponding to the stenciled oxide pattern, held within a frame formed by remaining portions of the substrate. The stenciled oxide membrane is capable of being supported entirely by the frame.

Subject Categories:

  • Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE