Accession Number:

ADD018128

Title:

Low Temperature Plasma Film Deposition Using Dielectric Chamber as Source Material.

Descriptive Note:

Patent, Filed 11 Jun 92, patented 23 Apr 96,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1996-04-23

Pagination or Media Count:

6.0

Abstract:

A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.

Subject Categories:

  • Physical Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Plasma Physics and Magnetohydrodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE