Accession Number:

ADD018125

Title:

Method for Intrinsically Doped III-A and V-A Compounds.

Descriptive Note:

Patent, Filed 8 Mar 95, Patented 11 Jun 96,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1996-06-11

Pagination or Media Count:

5.0

Abstract:

An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE