Patent, Filed 29 Jun 94, patented 23 Apr 96,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A quantum well infrared photodetector comprises multiple quantum well detectors formed within a single P-N structure forward biased by an external voltage source, for directly convening infrared radiation having a wavelength in the range of approximately 4-15 micrometers into visible radiation or near infrared radiation. Multiple quantum well detectors disposed between the P-N contact layers are comprised of alternating gallium arsenide GaAs quantum well layers, aluminum gallium arsenide AlGaAs barrier layers and alternatively, a blocking layer of aluminum arsenide AlAs positioned between a last aluminum gallium arsenide AlGaAs barrier layer and the N contact layer and are forward-biased by the external voltage source in order to produce band gap luminescence by radiative recombination of excess carriers representative of electrons and holes in the N contact layer when the P contact layer is illuminated with optical energy of incident infrared radiation.
- Infrared Detection and Detectors