Annular GMR-Based Memory Element.
Patent, Filed 21 Feb 95, patented 30 Jul 96,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A memory element has a sandwich structure in which rings of ferromagnetic material are spaced apart by a layer of a non-magnetic conductor which is also typically a ring. These ferromagnetic rings will have differing magnetic hardness. At least one ring will be magnetically hard or antiferromagnetically-pinned. At least one other ring will be magnetically softer than the hard or antiferromagnetically-pinned ring. The non-magnetic conductor is at least thick enough to prevent essentially all exchange coupling between the ferromagnetic rings. Conducting leads provide current to pass through the ferromagnetic rings, perpendicular to magnetic moments in the ferromagnetic rings.
- Properties of Metals and Alloys
- Computer Hardware
- Electricity and Magnetism