Apparatus for Performing Growth of Compound Thin Films.
Patent, Filed 11 Dec 81, patented 28 Jun 83,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
- Solid State Physics