Apparatus for Atomic Layer Epitaxial Growth.
Patent, Filed 21 Dec 89, patented 19 Feb 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
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An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap there between. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.
- Atomic and Molecular Physics and Spectroscopy