Accession Number:

ADD015953

Title:

Apparatus for Atomic Layer Epitaxial Growth.

Descriptive Note:

Patent, Filed 21 Dec 89, patented 19 Feb 91,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1991-02-19

Pagination or Media Count:

10.0

Abstract:

An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap there between. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.

Subject Categories:

  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE