Accession Number:

ADD015925

Title:

Monocrystalline Germanium Film on Sapphire.

Descriptive Note:

Patent, Filed 1 Jun 90, Patented 27 Apr 93,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1993-04-27

Pagination or Media Count:

4.0

Abstract:

A monocrystalline germanium film is grown on a sapphire substrate with a I 102 orientation. The substrate is first pretreated to restructure the 1102 surface plane. Typically, restructuring is accomplished by either an anneal at high temperature or ion bombardment. A monocrystalline germanium layer is grown on the pretreated surface by a vapor deposition process such as molecular beam epitaxy or chemical vapor deposition.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Laminates and Composite Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE