Resistive Gate Magnetic Field Sensor.
Patent, Filed 31 Dec 90, Patented 4 May 93,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
A FET device for sensing a magnetic field, the FET device comprising a semiconductor material having a source at a first position therein and receiving means at a second position therein for receiving charge carriers bias voltage means for providing a bias voltage between the source and the receiving means to produce a movement of charge carriers between the source and the receiving means a channel layer disposed within the semiconductor material between the source and the receiving means through which the charge carriers move as a function of the bias voltage and the magnetic field being sensed a resistive gate disposed between the source and the receiving means and above the channel layer a first resistive gate contact disposed in a first preselected position with respect to the source a second resistive gate contact disposed in a second preselected position with respect to the receiving means a resistive gate voltage means for providing a resistive gate bias voltage between the first and second resistive gate contacts to establish a longitudinal electric field in the channel layer and output means disposed in the semiconductor material for providing a signal related to the strength of the magnetic field sensed by the FET de vice.
- Electrical and Electronic Equipment
- Electricity and Magnetism