Accession Number:

ADD015818

Title:

Substrate Temperature Control Apparatus and Technique for CVD Reactors.

Descriptive Note:

Patent Application, filed 18 May 93,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1993-05-18

Pagination or Media Count:

26.0

Abstract:

One of the critical experimental parameters affecting the quality and growth rate of chemical vapor deposition species, such as, diamond is the substrate temperature. An apparatus and technique for the precise control of the substrate temperature in a chemical vapor deposition environment has been developed. In a preferred embodiment, the technique uses a variable gas mixture in conjunction with the disclosed apparatus of the present invention to precisely control the temperature of the substrate to within at least - 20 deg C for extended periods of time and over large area substrates on the order of 1 in diameter or larger

Subject Categories:

  • Physical Chemistry
  • Laminates and Composite Materials
  • Thermodynamics
  • Coatings, Colorants and Finishes

Distribution Statement:

APPROVED FOR PUBLIC RELEASE