Apparatus for and a Method of Growing Thin Films of Elemental Semiconductors.
Patent, filed 22 Jun 90, patented 6 Jul 93,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
An apparatus for and a method of growing thin films of the elemental semiconductors group IVB, i.e., silicon, germanium, tin, lead. and, especially diamond, using modified atomic layer epitaxial ALE growth techniques are disclosed. In addition, stoichiometric and nonstoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride CF4, and a hydrocarbon reactant gas, e.g., methane CH4, at substrate temperatures between 300 and 650 Celsius. A stepping motor device portion of the apparatus is controlled by a programmable controller portion such that the surfaces of the plurality of substrates are given exposures of at least 10exp 15 moleculessq cm of each of the reactant gases. The chemical reaction time to complete the growth of an individual atom layer is approximately 25 x 10exp -6 second.
- *CARBON TETRAFLUORIDE
- *THIN FILMS
- *EPITAXIAL GROWTH
- *ATOMIC STRUCTURE
- CHEMICAL REACTIONS
- REACTION TIME
- GROUP IV COMPOUNDS
- Electrical and Electronic Equipment
- Solid State Physics
- Inorganic Chemistry