Accession Number:

ADD015794

Title:

Method for Doping GaAs with High Vapor Pressure Elements.

Descriptive Note:

Patent, filed 3 May 91, patented 2 Feb 93,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1993-02-02

Pagination or Media Count:

7.0

Abstract:

A method is disclosed for the incorporation of relatively high vapor pressure elements into good quality GaAs at extremely low Tsub s using the migration enhanced epitaxy technique. Zinc was doped in GaAs material grown at a low T, of 120 deg C. Zinc may thus be used as a p-type dopant replacing more toxic Be. Similarly, other high vapor pressure elements can be incorporated much more efficiently into the material grown at low Tsub s.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Crystallography
  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE