Method for Doping GaAs with High Vapor Pressure Elements.
Patent, filed 3 May 91, patented 2 Feb 93,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A method is disclosed for the incorporation of relatively high vapor pressure elements into good quality GaAs at extremely low Tsub s using the migration enhanced epitaxy technique. Zinc was doped in GaAs material grown at a low T, of 120 deg C. Zinc may thus be used as a p-type dopant replacing more toxic Be. Similarly, other high vapor pressure elements can be incorporated much more efficiently into the material grown at low Tsub s.
- Physical Chemistry
- Electrical and Electronic Equipment
- Inorganic Chemistry