Accession Number:

ADD015764

Title:

Thin-Film Edge Field Emitter Device and Method of Manufacture Therefore.

Descriptive Note:

Patent Application, filed 31 Mar 93,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1993-03-31

Pagination or Media Count:

36.0

Abstract:

It is therefore an object of the present invention to provide a field emitter device which substantially eliminates the need for the use of high spatial resolution lithography in its fabrication. It is another object of the present invention to provide a field emitter device having inherent advantages over previous electron sources, including higher emission currents, lower power requirements, less expensive fabrication costs and ease of integration with other circuitry. It is a further object of the present invention to fabricate gated and ungated thin-film edge field emitter devices wherein the spacing between the elements is small enough to enable low voltage operation. It is a further object of the present invention to fabricate FEAs over a large area in a manner which is inexpensive, yet results in an equal or greater degree of precision and reproducibility when compared with other prior art processes

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE