Method and Apparatus for Characterizing the Quality for Electrically Thin Semiconductor Films.
Patent, Filed 23 Apr 90, patented 23 Mar 93,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A method and apparatus for characterizing the quality of an electrically thin semiconductor film and its interfaces with adjacent materials by employing a capacitor and a topside electrical contact on the same side of the electrically thin semiconductor film to thereby permit the taking of capacitance-voltage C-V measurements. A computer controlled C-V measuring system is operatively coupled to the contact and capacitor to modulate the potential on the capacitor. Variation of the voltage applied to the capacitor enables modulation of the potential applied to the film to thereby vary the conductivity of the film between the capacitor gate node and the topside contact.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Physical Chemistry