Control of Crystallite Size in Diamond Film Chemical Vapor Deposition.
Patent, Filed 16 May 91, patented 8 Dec 92,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.
- *CHEMICAL REACTIONS
- VACUUM CHAMBERS
- VAPOR DEPOSITION
- CRYSTAL STRUCTURE
- REFRACTORY COATINGS
- HEAT TREATMENT
- Physical Chemistry
- Ceramics, Refractories and Glass
- Coatings, Colorants and Finishes