Accession Number:

ADD015432

Title:

Method for Fabricating Ohmic Contacts on Semiconducting Diamond.

Descriptive Note:

Patent, Filed 29 Jun 89, patented 8 Oct 91,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1991-10-08

Pagination or Media Count:

9.0

Abstract:

A method is disclosed for fabricating ohmic contacts on semiconducting diamond. A carbide forming metal is deposited over a surface of the semiconducting diamond. In some applications, one or more layers of an intermediate metal are deposited over the carbide forming metal. A corrosion resistant metal is then deposited over the intermediate metal, if present, or the carbide forming metal. The semiconducting diamond and metals are heated in an inert environment at a temperature anywhere from 350 to 1200 degrees Celsius.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE