Method for Fabricating Ohmic Contacts on Semiconducting Diamond.
Patent, Filed 29 Jun 89, patented 8 Oct 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A method is disclosed for fabricating ohmic contacts on semiconducting diamond. A carbide forming metal is deposited over a surface of the semiconducting diamond. In some applications, one or more layers of an intermediate metal are deposited over the carbide forming metal. A corrosion resistant metal is then deposited over the intermediate metal, if present, or the carbide forming metal. The semiconducting diamond and metals are heated in an inert environment at a temperature anywhere from 350 to 1200 degrees Celsius.
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