Lithographic Mask and Method for Fabrication Thereof.
Patent Application, Filed 15 May 92,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This invention pertains to improving resolution in making electronic masks. More specifically, this invention pertains to reduction of minimum feature sizes and proximity effects by reducing backscattering of electrons in high voltage electron beam lithography used in making electronic masks. Recently, there has been an interest in the development of x-ray technology as an exposure source in the production of electronic devices, such as integrated circuits. Presently, x-ray lithography is believed to be the most promising path on the horizon for manufacturing integrated circuits of 0.25 micrometers and less. There are still many elements of the lithographic process to be developed in order to meet the goal of manufacturing ultra large scale integrated circuits with feature sizes in the range of 0.10 micrometers.
- Protective Equipment
- Printing and Graphic Arts
- Manufacturing and Industrial Engineering and Control of Production Systems