Semiconductor Heterojunction Device with Graded Bandgap.
Patent, Filed 27 Apr 90, patented 29 Oct 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
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The semiconductor materials of junction forming layers of a heterojunction structure are interfaced by a gap region that is graded by degree of alloying of those components of an interfacing material which are respectively compounded in the semiconductor materials of the junction forming layers having different bandgaps and band edges that are aligned by the grading of the interfacing gap region to selectively control rectifying junction characteristics. Author
- Solid State Physics
- Electrical and Electronic Equipment