Method of Forming Nanometer-Scale Trenches and Vias.
Patent Application, Filed 24 Oct 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
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Nanometer thick metallic layers are fabricated on trenches or holes especially vias within a substrate by depositing, by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, a metallic layer on a substrate surface on which one or more trenches or holes are formed. The metallic layer thus formed has an extremely small grain size, which permits the attainment of very high spatial resolution and thus permits the formation of extremely small trenches and holes, increasing the attainable memorycircuit density. This invention is useful in the fabrication of ultra-high density trench capacitors and ULSI microelectronic circuits. Author
- Electrical and Electronic Equipment
- Solid State Physics