Graded Bandgap Semiconductor Device for Real-Time Imaging.
Patent Application, Filed 15 Apr 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
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Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail. Author
- Infrared Detection and Detectors
- Solid State Physics