Accession Number:

ADD015000

Title:

Graded Bandgap Semiconductor Device for Real-Time Imaging.

Descriptive Note:

Patent Application, Filed 15 Apr 91,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1991-04-15

Pagination or Media Count:

9.0

Abstract:

Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE