Accession Number:

ADD014973

Title:

TiW Diffusion Barrier for AuZn Ohmic Contact to P-Type InP.

Descriptive Note:

Patent, Filed 28 Dec 88, patented 14 May 91,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1991-05-14

Pagination or Media Count:

9.0

Abstract:

A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE