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TiW Diffusion Barrier for AuZn Ohmic Contact to P-Type InP.
Patent, Filed 28 Dec 88, patented 14 May 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.
APPROVED FOR PUBLIC RELEASE