Accession Number:

ADD014971

Title:

Thin Film Magnetic Memory Elements.

Descriptive Note:

Patent, Filed 1 Jun 89, patented 18 Jun 91,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Prinz, Gary A.

Report Date:

1991-06-18

Pagination or Media Count:

8.0

Abstract:

A magnetic memory element is fabricated from a thin magnetic film wherein the magnetic films is grown on a lattice-matched substrate and subsequently patterned to form a closure domain. The closer domain is comprised of a plurality of legs which are joined at domain walls. The individual legs are patterned in the thin magnetic film to lie parallel to an easy axis of the thin film crystal structure being used. Thus, each closure domain represents a magnetic memory element. Fringing fields about the memory elements are eliminated due to the closure domain design. An array of such closure domains can be grown on a substrate and can be packed to high densities up to the limits of current lithographic technology. Such thin film magnetic memory arrays are non-volatile and are compatible with existing Random Access Memories.

Descriptors:

• CLOSURES
• CRYSTAL STRUCTURE
• DOMAIN WALLS
• FILMS
• HIGH DENSITY
• LATTICE DYNAMICS
• LEGS
• LITHOGRAPHY
• MAGNETIC MATERIALS
• MATCHING
• MEMORY DEVICES
• SUBSTRATES
• THIN FILMS

Subject Categories:

• Computer Hardware
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE