Laser Diode Pumped, Erbium-Doped, Solid State Laser with High Slope Efficiency.
Patent, Filed 31 Oct 89, patented 7 May 91,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A laser and method for producing a laser emission at a wavelength of substantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser comprises later diode means for emitting a pump beam at a preselected wavelength a crystal and a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path there between the crystal having a preselected host material doped with a predetermined percent concentration of erbium activator ions sufficient to produce a laser emission at substantially 2.8 microns when the crystal is pumped by the laser diode means, a portion of the laser emission at substantially 2.8 microns being outputted from one of the first and second reflective elements at a slope efficiency of at least 5 percent, but preferably 10 percent, when the crystal is pumped by the pump beam.
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