Accession Number:

ADD014789

Title:

Formation of Epitaxial SI-GE Heterostructures by Solid Phase Epitaxy.

Descriptive Note:

Patent, Filed 15 Dec 89, patented 4 Dec 90,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Prokes, Sharka M.
• Tseng, Wen F.
• Christou, Aristos

Report Date:

1990-12-04

Pagination or Media Count:

4.0

Abstract:

Epitaxial Ge-Si heterostructures are currently of interest due to their potentially useful optical- and electronic properties. Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precautions need be taken to ensure a clean amorphous Si-GeSi interface.

Descriptors:

• ELECTRONICS
• EPITAXIAL GROWTH
• MOISTURE
• OXIDATION
• SILICON
• SOLID PHASES
• WAFERS

Subject Categories:

• Inorganic Chemistry
• Electrical and Electronic Equipment
• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE