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Formation of Epitaxial SI-GE Heterostructures by Solid Phase Epitaxy.
Patent, Filed 15 Dec 89, patented 4 Dec 90,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
Epitaxial Ge-Si heterostructures are currently of interest due to their potentially useful optical- and electronic properties. Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precautions need be taken to ensure a clean amorphous Si-GeSi interface.
APPROVED FOR PUBLIC RELEASE