Enhanced Crossite Random Access Memory Element and a Process for the Fabrication Thereof.
Patent, Filed 20 Jun 83, patented 9 Oct 90,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This patent discloses an enhanced random access memory element and a process for its fabrication, wherein permalloy thin films are patterned, inter alia, into a plurality of geminous memory cells to form a matrix or array of juxtaposed sloped columns. Each of the geminous memory cells is configured into a unique pattern comprising twin sub-patterns joined in an opposite fashion, i.e., reversed and inversed, so as to share a common area of permalloy. Consequently, magnetic domain walls Neel walls are formed at opposite and adjacent apexes of the unique pattern parallel to the easy axis after a predetermined magnetic field is applied along the hard axis of array of geminous memory cells and then reduced to zero. In this way, the magnetization is properly aligned for use of the array of geminous memory cells as an enhanced nonvolatile random access memory element. Subsequent magnetization of the proper amount at particular ones of the geminous memory cells will cause two crossties and two Bloch lines to form therein so as to couple to each other, crosstie to Blch line, Blcoh line to crosstie. This configuration provides a larger readout signal, a larger signal to noise ratio, and will operate at lower power levels for the same density of information than previous crosstie random access memory elements. tr
- Computer Hardware